Recently, the national key research and development project team led by Prof. Ruan Shuangchen of Shenzhen University of Technology (SZUT), under the support of the project of "Crystal Thin-Film Processing and Preparation of New Generation of Gain Devices" of the National Key Research and Development Program of the Ministry of Science and Technology (MOST), has made important progress in research on the key scientific issues of crystal thin-film processing and preparation of new generation of gain devices. We are the first one in China to realize the crystal packaging of Yb:YAG wafer with diameter >20mm, epi konsepsyon 48-sistèm ponpe kou nan klas kilowat.
Lazè ultrarapid ki gen gwo pouvwa yo itilize nan manifakti avanse, enfòmasyon, mikwo-elektwonik, medikal, enèji, militè ak lòt domèn, ak rechèch aplikasyon syantifik ak teknolojik ki gen rapò ak enpòtan pou pwomosyon devlopman estratejik nasyonal la. Aparèy lazè genyen se materyèl debaz debaz nan gwo pouvwa ultrarapid lazè, ki te trè konsène pa tout peyi nan mond lan. Lazè fim mens ak bon jan kalite gwo bout bwa ekselan ak efikasite segondè nan efikasite konvèsyon optik-optik yo te lajman itilize nan anpil jaden tankou manifakti endistriyèl ak rechèch syantifik debaz. Sepandan, mank de teknoloji debaz kle tankou pwosesis presizyon nan kristal mens-fim, konsepsyon ak anbalaj nan sistèm koule chalè, ak preparasyon nan aparèy genyen seryezman limite devlopman an plis nan gwo pouvwa lazè mens-fim nan Lachin.
Relying on the Key Laboratory of Advanced Optical Precision Manufacturing Technology for Guangdong Universities, Shenzhen Key Laboratory of Laser Engineering, Sino-German Institute of Intelligent Manufacturing, and College of Engineering Physics, Shenzhen University of Technology has been carrying out the research on thin-flake laser technology since 2021, and adopted the self-developed thin-flake crystals with a diameter of 12 mm and regenerative amplification technology at the beginning of 2022 to realize the high power regenerative amplification of the resonance cavity through the chromatic dispersion compensation and the nonlinear effect control, the laser output with single pulse energy >500μJ, lajè batman kè<7.5ps, and average power >200W reyalize, espesyalman pèfòmans ekselan nan bon jan kalite gwo bout bwa M2<1.1 and optical-to-optical conversion efficiency >50%, ki mete yon fondasyon solid pou konvèsyon frekans ki pa lineyè trè efikas deyò kavite a.
The project team adopted wavelength-locked 969nm "zero-phonon line" pumping to achieve the highest continuous output power >1300W, ak yon maksimòm konvèsyon optik-a-optik efikasite nan prèske 80%, ki gen pèfòmans ekselan mete yon fondasyon enpòtan pou rechèch la nan kilowat-klas mwayèn pouvwa ak ultrarapid lazè mens-fim nan 100 mJ.
▲ (Goch) 1000W @ 969nm ponp (Dwat) 2000W @ 969nm ponp
Atravè pwojè kle R & D Ministè Syans ak Teknoloji a, ekip pwojè a oryante sou sekirite endistriyèl nasyonal la ak pi gwo bezwen konstriksyon jeni, avansman nan materyèl lazè gwo pouvwa ak aparèy aplikasyon teknoloji debaz kle yo, atravè chèn inovasyon, dekouvèt. nan preparasyon estratejik gwo pouvwa kristal lazè ak aplikasyon teknoloji kle komen nan tout aspè, amelyore enfòmasyon Lachin nan, enèji, transpò, ekipman-wo fen ak lòt zòn nan materyèl yo kristal nwayo lazè ak aparèy nan kapasite yo kontwòl endepandan. Li pral amelyore kapasite nan kontwòl endepandan nan materyèl nwayo kristal lazè ak aparèy nan domèn enfòmasyon, enèji, transpò ak ekipman-wo fen nan Lachin, epi sèvi devlopman nan nouvo enèji, elektwonik 3C, manifakti-wo fen ak lòt segondè. -teknoloji endistri yo.
